Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

(2009) Ayumu Sato et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

(2008) Mami Fujii et al.   JAPANESE JOURNAL OF APPLIED PHYSICS