A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors
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Title
A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 4, Issue 44, Pages 10486-10493
Publisher
Royal Society of Chemistry (RSC)
Online
2016-10-14
DOI
10.1039/c6tc03725a
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