A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors
出版年份 2016 全文链接
标题
A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors
作者
关键词
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出版物
Journal of Materials Chemistry C
Volume 4, Issue 44, Pages 10486-10493
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-10-14
DOI
10.1039/c6tc03725a
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