Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors

Title
Investigation of Polysilazane-Based $\hbox{SiO}_{2}$ Gate Insulator for Oxide Semiconductor Thin-Film Transistors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 3, Pages 1149-1153
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-02-05
DOI
10.1109/ted.2013.2241440

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