Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors
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Title
Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors
Authors
Keywords
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Journal
RSC Advances
Volume 5, Issue 45, Pages 36083-36087
Publisher
Royal Society of Chemistry (RSC)
Online
2015-04-15
DOI
10.1039/c5ra02989a
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