Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

(2016) Jihang Lee et al.   ACS Nano

Nonlinearity analysis of TaOX redox-based RRAM

(2016) Wonjoo Kim et al.   MICROELECTRONIC ENGINEERING

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

(2015) Yoshifumi Nishi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

(2015) Tae Hyung Park et al.   Scientific Reports

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches

(2014) Abhishek A. Sharma et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of the high work function and high conductivity of MoO3

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

(2014) L. Goux et al.   ECS Solid State Letters

Transport properties of two finite armchair graphene nanoribbons

(2013) Luis Rosales et al.   Nanoscale Research Letters

Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes

(2012) S. Stille et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

(2011) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament diffusion model for simulating reset and retention processes in RRAM

(2011) S. Larentis et al.   MICROELECTRONIC ENGINEERING

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Limits to doping in oxides

(2011) J. Robertson et al.   PHYSICAL REVIEW B

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology