Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology
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Title
Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology
Authors
Keywords
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Journal
Journal of Physical Chemistry Letters
Volume 14, Issue 28, Pages 6444-6450
Publisher
American Chemical Society (ACS)
Online
2023-07-12
DOI
10.1021/acs.jpclett.3c01368
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