Novel p-type oxides with corundum structure for gallium oxide electronics
Published 2022 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Novel p-type oxides with corundum structure for gallium oxide electronics
Authors
Keywords
-
Journal
JOURNAL OF MATERIALS RESEARCH
Volume 37, Issue 3, Pages 651-659
Publisher
Springer Science and Business Media LLC
Online
2022-01-19
DOI
10.1557/s43578-021-00439-4
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs
- (2021) Man Hoi Wong et al. APPLIED PHYSICS LETTERS
- Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics
- (2021) Kentaro Kaneko et al. APPLIED PHYSICS LETTERS
- First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3
- (2021) Abhay Kumar Mondal et al. Materials
- In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction
- (2021) J. G. Hao et al. APPLIED PHYSICS LETTERS
- Vertical β-Ga₂O₃ Power Transistors: A Review
- (2020) Man Hoi Wong et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
- (2018) Jonathan Lee et al. APPLIED PHYSICS LETTERS
- A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique
- (2018) Kentaro Kaneko et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
- (2018) E. B. Yakimov et al. JOURNAL OF APPLIED PHYSICS
- Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure
- (2018) Shin-ichi Kan et al. APPLIED PHYSICS LETTERS
- Elements (Si, Sn, and Mg) doped α-Ga2O3: First-principles investigations and predictions
- (2018) Linpeng Dong et al. COMPUTATIONAL MATERIALS SCIENCE
- Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®
- (2016) Masaya Oda et al. Applied Physics Express
- Current status of Ga2O3power devices
- (2016) Masataka Higashiwaki et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy
- (2015) Takeyoshi Onuma et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth of corundum-structured (InxGa1−x)2O3 alloy thin films on sapphire substrates with buffer layers
- (2014) Norihiro Suzuki et al. JOURNAL OF CRYSTAL GROWTH
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
- (2013) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
- (2013) T. Onuma et al. APPLIED PHYSICS LETTERS
- Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3
- (2013) Kentaro Kaneko et al. JOURNAL OF APPLIED PHYSICS
- Enhanced Photocurrent in Rh-Substituted $\alpha$-Fe$_{2}$O$_{3}$ Thin Films Grown by Pulsed Laser Deposition
- (2012) Munetoshi Seki et al. Applied Physics Express
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- (2012) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Creation of Nanoparticle–Nanotube Conjugates for Life-Science Application Using Gas–Liquid Interfacial Plasmas
- (2012) Toshiro Kaneko et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers
- (2012) Norihiro Suzuki et al. JOURNAL OF CRYSTAL GROWTH
- Surface oxides of Ir(111) prepared by gas-phase oxygen atoms
- (2012) Wen-Hung Chung et al. SURFACE SCIENCE
- Effect of the d electrons on phase transitions in transition-metal sesquioxides
- (2010) Koichiro Umemoto et al. PHYSICS AND CHEMISTRY OF MINERALS
- Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3Alloy Thin Films on Sapphire Substrates
- (2009) Kentaro Kaneko et al. Applied Physics Express
- β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy
- (2009) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Epitaxial ZnO Thin Films ona-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition
- (2009) Hiroyuki Nishinaka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Flame Detection by a β-Ga2O3-Based Sensor
- (2009) Takayoshi Oshima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- FPLAPW study of the structural, electronic, and optical properties of Ga2O3: Monoclinic and hexagonal phases
- (2009) F. Litimein et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
- (2008) Takayoshi Oshima et al. Applied Physics Express
- p-channel thin-film transistor using p-type oxide semiconductor, SnO
- (2008) Yoichi Ogo et al. APPLIED PHYSICS LETTERS
- Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition
- (2008) Toshiyuki Kawaharamura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
- (2008) Daisuke Shinohara et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Oxidation of Ir(111): From O−Ir−O Trilayer to Bulk Oxide Formation
- (2008) Y. B. He et al. Journal of Physical Chemistry C
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started