Journal
CHINESE PHYSICS B
Volume 28, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/28/4/048502
Keywords
Ga2O3 single crystal; solar-blind; photodetector; high temperature
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Funding
- National Key Research and Development Plan of China [2016YFB0400600, 2016YFB0400601]
- National Natural Science Foundation of China [61574026, 11675198, 61774072, 11405017]
- Natural Science Foundation of Liaoning Province, China [201602453, 201602176]
- China Postdoctoral Science Foundation [2016M591434]
- Dalian Science and Technology Innovation Fund [2018J12GX060]
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A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga2O3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (= 3213) and solar-blind/UV (= 834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8 degrees C. The photodetector maintains a high reversibility and response speed, even at high temperatures.
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