Low defect density and small I − V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

(2020) Zhuangzhuang Hu et al.   IEEE ELECTRON DEVICE LETTERS

1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2

(2020) Xing Lu et al.   IEEE ELECTRON DEVICE LETTERS

Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes

(2020) Zhe (Ashley) Jian et al.   APPLIED PHYSICS LETTERS

A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode

(2020) H. H. Gong et al.   APPLIED PHYSICS LETTERS

High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

(2019) Lulu Du et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of CuI as a P–N heterojunction to β-Ga2O3

(2019) James C. Gallagher et al.   Applied Physics Express

Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 p-n heterojunction

(2019) Sahadeb Ghosh et al.   APPLIED PHYSICS LETTERS

Hysteresis Effect in Current-Voltage Characteristic of Ni/n-type 4H-SiC Schottky Structure

(2019) Hao Yuan et al.   Chinese Physics B

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

(2019) Chia-Hung Lin et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2

(2019) Noah Allen et al.   IEEE ELECTRON DEVICE LETTERS

The annealing temperature and films thickness effect on the surface morphology, preferential orientation and dielectric property of NiO films

(2019) Pan Yang et al.   APPLIED SURFACE SCIENCE

High-Performance Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With Implanted Edge Termination

(2019) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2

(2019) Wenshen Li et al.   IEEE ELECTRON DEVICE LETTERS

High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

(2019) Yuangang Wang et al.   IEEE ELECTRON DEVICE LETTERS

Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics *These authors contributed equally to this work.

(2018) Qiming He et al.   IEEE ELECTRON DEVICE LETTERS

C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

(2018) Hang Dong et al.   AIP Advances

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

(2018) Zhuangzhuang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

(2018) Shin-ichi Kan et al.   APPLIED PHYSICS LETTERS

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of

(2018) Wenshen Li et al.   APPLIED PHYSICS LETTERS

Temperature-Dependent Electrical Characteristics of β-Ga2O3 Diodes with W Schottky Contacts up to 500°C

(2018) Chaker Fares et al.   ECS Journal of Solid State Science and Technology

A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

(2017) S. Madhusoodhanan et al.   IEEE ELECTRON DEVICE LETTERS

First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

(2017) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

(2016) Yoshihiro Kokubun et al.   Applied Physics Express

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode

(2011) Sanjeev K. Gupta et al.   PHYSICA B-CONDENSED MATTER