Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 6, Pages 863-866Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3072915
Keywords
Reconfigurable FET (RFET); low-frequency noise; neuromorphic system; program/erase (P/E) cycling
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Funding
- National Research Foundation of Korea [NRF2016R1A2B3009361]
- Brain Korea 21 Plus Project in 2021
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The study reveals that the 1/f noise origin of GSD varies depending on the operation mode and current region, leading to different effects of P/E cycling. Specifically, the n-type mode GSD operating in the high I-O region shows the largest noise increase after 10⁴ P/E cycling.
In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/f noise origin depending on the operation mode (p-or n-type FET mode) and current (I-O) region (low or high I-O region). Depending on the 1/f noise origin, the effects of the program/erase (P/E) cycling differs. The n-type mode GSD operating in the high I-O region whose 1/f noise is originated from the carrier number fluctuation (CNF) shows the largest noise increase after the 10(4) P/E cycling.
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