Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

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Title
Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 2, Pages 745-750
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-01-18
DOI
10.1109/ted.2019.2961208

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