Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
出版年份 2022 全文链接
标题
Effects of post cooling on the remnant polarization and coercive field characteristics of atomic layer deposited Al-doped HfO2 thin films
作者
关键词
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出版物
APPLIED SURFACE SCIENCE
Volume 601, Issue -, Pages 154039
出版商
Elsevier BV
发表日期
2022-06-22
DOI
10.1016/j.apsusc.2022.154039
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
- (2020) Vekateswarlu Gaddam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Enhanced ferroelectricity in ultrathin films grown directly on silicon
- (2020) Suraj S. Cheema et al. NATURE
- Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide
- (2019) Hojoon Ryu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- AI-Enabled Future Wireless Networks: Challenges, Opportunities, and Open Issues
- (2019) Medhat Elsayed et al. IEEE Vehicular Technology Magazine
- On the Origin of the Large Remanent Polarization in La:HfO 2
- (2019) Tony Schenk et al. Advanced Electronic Materials
- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
- (2018) Robin Materlik et al. JOURNAL OF APPLIED PHYSICS
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
- (2018) Youngin Goh et al. NANOTECHNOLOGY
- Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures
- (2018) Jackson D. Anderson et al. IEEE Journal of the Electron Devices Society
- Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
- (2018) Min Hyuk Park et al. Advanced Electronic Materials
- Millimeter-Wave Wireless Communications for IoT-Cloud Supported Autonomous Vehicles: Overview, Design, and Challenges
- (2017) Linghe Kong et al. IEEE COMMUNICATIONS MAGAZINE
- Latency Critical IoT Applications in 5G: Perspective on the Design of Radio Interface and Network Architecture
- (2017) Philipp Schulz et al. IEEE COMMUNICATIONS MAGAZINE
- 256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
- (2017) Dongku Kang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
- (2017) K. Florent et al. JOURNAL OF APPLIED PHYSICS
- Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
- (2017) Min Hyuk Park et al. Nanoscale
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants
- (2017) M. H. Park et al. Journal of Materials Chemistry C
- Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
- (2017) Min Hyuk Park et al. Nanoscale
- Induction of ferroelectricity in nanoscale ZrO 2 /HfO 2 bilayer thin films on Pt/Ti/SiO 2 /Si substrates
- (2016) Y.W. Lu et al. ACTA MATERIALIA
- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
- (2016) Takahisa Shiraishi et al. APPLIED PHYSICS LETTERS
- Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
- (2016) A. G. Chernikova et al. APPLIED PHYSICS LETTERS
- Internet of Things in the 5G Era: Enablers, Architecture, and Business Models
- (2016) Maria Rita Palattella et al. IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS
- Ferroelectricity of nondoped thin HfO2films in TiN/HfO2/TiN stacks
- (2016) Tomonori Nishimura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
- (2015) Tony Schenk et al. ACS Applied Materials & Interfaces
- Correspondence - Dynamic leakage current compensation revisited
- (2015) Tony Schenk et al. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Phase transitions in ferroelectric silicon doped hafnium oxide
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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