Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy

Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy

(2021) Ping Wang et al.   APPLIED PHYSICS LETTERS

Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN

(2021) Niklas Wolff et al.   JOURNAL OF APPLIED PHYSICS

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

(2021) Sung-Lin Tsai et al.   APPLIED PHYSICS LETTERS

A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films

(2021) Junji Kataoka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Next generation ferroelectric materials for semiconductor process integration and their applications

(2021) T. Mikolajick et al.   JOURNAL OF APPLIED PHYSICS

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes

(2021) Dixiong Wang et al.   Physica Status Solidi-Rapid Research Letters

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

(2021) Sung-Lin Tsai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

(2021) Xiwen Liu et al.   NANO LETTERS

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al 0.6 Sc 0.4 N Films Using In Situ Optical Emission Spectrometry

(2021) Daniel Drury et al.   Physica Status Solidi-Rapid Research Letters

A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning

(2021) Sushant Rassay et al.   Physica Status Solidi-Rapid Research Letters

Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States

(2021) Jialin Wang et al.   Physica Status Solidi-Rapid Research Letters

Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy

(2020) Matthew T. Hardy et al.   Applied Physics Express

Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN

(2020) Ping Wang et al.   APPLIED PHYSICS LETTERS

Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

(2020) Jana Ligl et al.   JOURNAL OF APPLIED PHYSICS

Reconfigurable frequency multiplication with a ferroelectric transistor

(2020) Halid Mulaosmanovic et al.   Nature Electronics

Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy

(2020) Joseph Casamento et al.   APPLIED PHYSICS LETTERS

Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

(2020) Shinnosuke Yasuoka et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

(2020) Dixiong Wang et al.   IEEE ELECTRON DEVICE LETTERS

AlScN: A III-V semiconductor based ferroelectric

(2019) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectrcity and Large Piezoelectric Response of AlN/ScN superlattice

(2019) Mohammad Noor-A-Alam et al.   ACS Applied Materials & Interfaces

Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE

(2019) Kathrin Frei et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

(2019) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

(2019) Martina Baeumler et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of High-Temperature Quasi-Two-Dimensional Superconductors at the Interface of a Ferroelectric Ba0.8Sr0.2TiO3 Film and an Insulating Parent Compound of La2CuO4

(2019) Dmitrii P. Pavlov et al.   PHYSICAL REVIEW LETTERS

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

(2019) Stefano Leone et al.   Physica Status Solidi-Rapid Research Letters

Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

(2019) Jiankun Li et al.   ADVANCED MATERIALS

Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N

(2019) Joseph Casamento et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

(2018) Jiejie Zhu et al.   IEEE ELECTRON DEVICE LETTERS

Experimental search for high-temperature ferroelectric perovskites guided by two-step machine learning

(2018) Prasanna V. Balachandran et al.   Nature Communications

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

(2018) Ding Wang et al.   Advanced Electronic Materials

Thin-film ferroelectric materials and their applications

(2016) Lane W. Martin et al.   Nature Reviews Materials

Piezoelectric coefficients and spontaneous polarization of ScAlN

(2015) Miguel A Caro et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Mechanisms of aging and fatigue in ferroelectrics

(2015) Yuri A. Genenko et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Mechanisms of aging and fatigue in ferroelectrics

(2015) Yuri A. Genenko et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate

(2014) Yao Zhang et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Bandgap in Al1−xScxN

(2013) Ruopeng Deng et al.   APPLIED PHYSICS LETTERS

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

(2013) Siyuan Zhang et al.   JOURNAL OF APPLIED PHYSICS

Origin of the electrical instabilities in GaN/AlGaN double-barrier structure

(2011) S. Sakr et al.   APPLIED PHYSICS LETTERS

Polarization fatigue in ferroelectric thin films and related materials

(2009) X. J. Lou   JOURNAL OF APPLIED PHYSICS

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

(2008) Morito Akiyama et al.   ADVANCED MATERIALS