Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
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Title
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 22, Pages 223504
Publisher
AIP Publishing
Online
2021-06-03
DOI
10.1063/5.0054539
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- (2021) Dixiong Wang et al. Physica Status Solidi-Rapid Research Letters
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- (2021) Xiwen Liu et al. NANO LETTERS
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- (2021) Daniel Drury et al. Physica Status Solidi-Rapid Research Letters
- A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning
- (2021) Sushant Rassay et al. Physica Status Solidi-Rapid Research Letters
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- (2021) Jialin Wang et al. Physica Status Solidi-Rapid Research Letters
- Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
- (2020) Matthew T. Hardy et al. Applied Physics Express
- Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN
- (2020) Ping Wang et al. APPLIED PHYSICS LETTERS
- Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
- (2020) Jana Ligl et al. JOURNAL OF APPLIED PHYSICS
- Reconfigurable frequency multiplication with a ferroelectric transistor
- (2020) Halid Mulaosmanovic et al. Nature Electronics
- Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy
- (2020) Joseph Casamento et al. APPLIED PHYSICS LETTERS
- Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
- (2020) Shinnosuke Yasuoka et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
- (2020) Dixiong Wang et al. IEEE ELECTRON DEVICE LETTERS
- AlScN: A III-V semiconductor based ferroelectric
- (2019) Simon Fichtner et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectrcity and Large Piezoelectric Response of AlN/ScN superlattice
- (2019) Mohammad Noor-A-Alam et al. ACS Applied Materials & Interfaces
- Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
- (2019) Kathrin Frei et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance
- (2019) Andrew J. Green et al. IEEE ELECTRON DEVICE LETTERS
- Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
- (2019) Martina Baeumler et al. JOURNAL OF APPLIED PHYSICS
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- (2019) Dmitrii P. Pavlov et al. PHYSICAL REVIEW LETTERS
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- (2019) Stefano Leone et al. Physica Status Solidi-Rapid Research Letters
- Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing
- (2019) Jiankun Li et al. ADVANCED MATERIALS
- Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N
- (2019) Joseph Casamento et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance
- (2018) Jiejie Zhu et al. IEEE ELECTRON DEVICE LETTERS
- Experimental search for high-temperature ferroelectric perovskites guided by two-step machine learning
- (2018) Prasanna V. Balachandran et al. Nature Communications
- Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire
- (2018) Ding Wang et al. Advanced Electronic Materials
- Thin-film ferroelectric materials and their applications
- (2016) Lane W. Martin et al. Nature Reviews Materials
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- Mechanisms of aging and fatigue in ferroelectrics
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- Origin of the electrical instabilities in GaN/AlGaN double-barrier structure
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- Polarization fatigue in ferroelectric thin films and related materials
- (2009) X. J. Lou JOURNAL OF APPLIED PHYSICS
- Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
- (2008) Morito Akiyama et al. ADVANCED MATERIALS
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