Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

(2021) Alberto Maria Angelotti et al.   Electronics

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

(2020) Kyu-Won Jang et al.   Micromachines

Thermal Characterization and Modelling of AlGaN-GaN Multilayer Structures for HEMT Applications

(2020) Lisa Mitterhuber et al.   Energies

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

(2020) Mohammad Abdul Alim et al.   INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING

Characterization of Self-Heating Process in GaN-Based HEMTs

(2020) Daniel Gryglewski et al.   Electronics

An ambient temperature dependent small signal model of GaN HEMT using method of curve fitting

(2020) Arijit Majumdar et al.   INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING

Sensitivity analysis and uncertainty estimation in small‐signal modeling for InP HBT (invited paper)

(2020) Ke‐Jing Cao et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

Thermal Influence on S22 kink behavior of a 0.15-μm gate length AlGaN/GaN/SiC HEMT for microwave applications

(2019) Mohammad Abdul Alim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Thermal conductivity of GaN, GaN71 , and SiC from 150 K to 850 K

(2019) Qiye Zheng et al.   PHYSICAL REVIEW MATERIALS

Neural network electrothermal modeling approach for microwave active devices

(2019) Anwar Jarndal   INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

(2019) Yongbo Chen et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

Design Realization and Tests of a Space-Borne GaN Solid State Power Amplifier for Second Generation Galileo Navigation System

(2018) Rocco Giofre et al.   IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS

Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT

(2018) Mohammad A. Alim et al.   SOLID-STATE ELECTRONICS

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

(2018) Giovanni Crupi et al.   Electronics

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

(2018) Giovanni Crupi et al.   SOLID-STATE ELECTRONICS

Electrothermal DC characterization of GaN on Si MOS-HEMTs

(2017) R. Rodríguez et al.   SOLID-STATE ELECTRONICS

Temperature Influence on GaN HEMT Equivalent Circuit

(2016) Giovanni Crupi et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Temperature-Dependent DC and Small-Signal Analysis of AlGaAs/InGaAs pHEMT for High-Frequency Applications

(2016) Mohammad Abdul Alim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

(2016) Mohammad Abdul Alim et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

An improved linear modeling technique with sensitivity analysis for GaN HEMT

(2016) Danting Luo et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

The large world of FET small-signal equivalent circuits (invited paper)

(2016) Giovanni Crupi et al.   INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

(2016) Anwar Jarndal et al.   SOLID-STATE ELECTRONICS

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

(2016) Ronald Coutu et al.   Electronics

An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT

(2014) Giovanni Crupi et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Neural approach for temperature-dependent modeling of GaN HEMTs

(2014) Zlatica Marinković et al.   INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS

Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC

(2013) Corrado Florian et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

The Kink Phenomenon in the Transistor ${\rm S} _{22}$: A Systematic and Numerical Approach

(2012) Giovanni Crupi et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

A Unified Theory for $S$-Parameter Uncertainty Evaluation

(2012) Marco Garelli et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Investigation on the thermal behavior of microwave GaN HEMTs

(2011) Giovanni Crupi et al.   SOLID-STATE ELECTRONICS

Covariance-Based Vector-Network-Analyzer Uncertainty Analysis for Time- and Frequency-Domain Measurements

(2010) Arkadiusz Lewandowski et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

High-temperature modeling of AlGaN/GaN HEMTs

(2010) S. Vitanov et al.   SOLID-STATE ELECTRONICS

Dependence of GaN HEMT Millimeter-Wave Performance on Temperature

(2009) A.M. Darwish et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Investigation on the non-quasi-static effect implementation for millimeter-wave FET models

(2009) Giovanni Crupi et al.   INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING