Journal
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Volume 30, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/jnm.2139
Keywords
parameter extraction; sensitivity analysis; small-signal equivalent circuit; GaN HEMT
Funding
- National Natural Science Foundation of China [61176036]
Ask authors/readers for more resources
An improved linear modeling technique for gallium nitride high electron mobility transistor small-signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small-signal model. The analytical expressions for the relative sensitivities with respect to deviations in the measured scattering (S) parameters are also given here. The derived relationships have universal validity, but they have been verified by the good agreement between the measured S-parameters and simulated ones over the frequency range up to 40GHz. Copyright (c) 2016 John Wiley & Sons, Ltd.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available