Journal
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Volume 20, Issue 1, Pages 87-93Publisher
JOHN WILEY & SONS INC
DOI: 10.1002/mmce.20411
Keywords
millimeter-wave FETs; non-quasi-static effects; semiconductor device modeling; small-signal equivalent circuit
Funding
- Nano-RF [IST-027150]
- K.U.Leuven-OT
- Italian MIUR [RBIP06R9X5]
- Italian Ministero degli Affari Esteri
- Direzione Generale per la Promozione e la Cooperazione Culturale
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The present article analyzes in detail different intrinsic small-signal models for transistors. Particular attention is devoted to the non-quasi-static effects, which play a crucial role at microwave and millimeter-wave frequencies. The advantages and disadvantages of these different equivalent circuit topologies are analyzed from both theoretical and experimental standpoints. This study clearly proves that best choice among these model representations depends on the specific device technology besides the investigated frequency range. (c) 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE 20: 87-93, 2010.
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