Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 26, Issue 10, Pages 813-815Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2016.2601487
Keywords
Equivalent circuit; gallium nitride (GaN); high electron-mobility transistor (HEMT); temperature
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Funding
- FWO-Vlaanderen (Belgium)
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The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.
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