Journal
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Volume 29, Issue 9, Pages -Publisher
WILEY
DOI: 10.1002/mmce.21764
Keywords
electrothermal modeling; neural networks; small-signal modeling; S-parameters
Funding
- University of Sharjah, Sharjah, United Arab Emirates
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This article presents an artificial neural network (ANN) approaches for small- and large-signal modeling of active devices. The small-signal characteristics were modeled by S-parameters based feedforward NN models. The models have been implemented to simulate the bias, frequency and temperature dependence of measured S-parameters. Feedback NN based large-signal model was developed and implemented to simulate the drain current and its inherent thermal effect due to self-heating and ambient temperature. Both small- and large-signal models have been validated by measurements for 100-mu m and 1-mm GaN high electron mobility transistors and very good agreement was obtained.
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