Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect

(2019) Hyun-Jung Kim et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

(2019) Hwang et al.   Applied Sciences-Basel

Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing

(2018) Georges Pavlidis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure

(2018) Hyeon-Tak Kwak et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

(2018) Hyeon-Tak Kwak et al.   Applied Sciences-Basel

DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

(2018) Hyeon-Tak Kwak et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Nanoscale thermal transport. II. 2003–2012

(2014) David G. Cahill et al.   Applied Physics Reviews

Measurement of temperature-dependent stress in copper-filled silicon vias using polarized Raman spectroscopy

(2013) Ryuichi Sugie et al.   JOURNAL OF APPLIED PHYSICS

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

(2013) A Wang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

(2012) Xiao-Dong Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene quilts for thermal management of high-power GaN transistors

(2012) Zhong Yan et al.   Nature Communications

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

(2010) Athikom Manoi et al.   IEEE ELECTRON DEVICE LETTERS

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

(2009) G.J. Riedel et al.   IEEE ELECTRON DEVICE LETTERS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications

(2007) Th. Schubert et al.   MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING