Trapping Dynamics in GaN HEMTs for Millimeter-Wave Applications: Measurement-Based Characterization and Technology Comparison

Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements

(2020) Alberto Maria Angelotti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling of Short-Channel Effects in GaN HEMTs

(2020) Mojtaba Allaei et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An Accurate Characterization of Capture Time Constants in GaN HEMTs

(2019) Joao L. Gomes et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-$\mu$ m Ultrashort Gate Length

(2019) Mohamed Bouslama et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Microwave Characterization of Trapping Effects in 100-nm GaN-on-Si HEMT Technology

(2019) Gian Piero Gibiino et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

GaN-on-Si HEMTs for wireless base stations

(2019) Ferdinando Iucolano et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Isotrap Pulsed $IV$ Characterization of GaN HEMTs for PA Design

(2018) Gian Piero Gibiino et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A GaN HEMT Global Large-Signal Model Including Charge Trapping for Multibias Operation

(2018) Gian Piero Gibiino et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Characterization and Modeling of RF GaN Switches Accounting for Trap-Induced Degradation Under Operating Regimes

(2018) Corrado Florian et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

(2018) Hassan Hirshy et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Prepulsing Technique for the Characterization of GaN Power Amplifiers With Dynamic Supply Under Controlled Thermal and Trapping States

(2017) Corrado Florian et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

(2017) Nandha Kumar Subramani et al.   IEEE Journal of the Electron Devices Society

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

(2015) Mulagumoottil Jesudas Anand et al.   Applied Physics Express

A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

(2014) Alberto Santarelli et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

(2013) Davide Bisi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

(2013) Alessandro Chini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

(2012) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design

(2012) Justin B. King et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES