Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

(2019) Wei Zhang et al.   Materials

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention

(2017) Wei Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Method for disclosing invisible physical properties in metal−ferroelectric−insulator−semiconductor gate stacks

(2017) Shigeki Sakai et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance

(2015) Le Van Hai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall

(2014) Le Van Hai et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

(2013) Xizhen Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical properties of CaxSr1−xBi2Ta2O9ferroelectric-gate field-effect transistors

(2013) Wei Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

(2012) Kang Yan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

FeFET Logic Circuits for Operating A 64 kb FeNAND Flash Memory Array

(2012) Xizhen Zhang et al.   INTEGRATED FERROELECTRICS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

(2010) Takeshi Horiuchi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors

(2010) Le Van Hai et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

FeCMOS logic inverter circuits with nonvolatile-memory function

(2009) Mitsue Takahashi et al.   IEICE Electronics Express

Nonlinear Dynamics of Domain-Wall Propagation in Epitaxial Ferroelectric Thin Films

(2009) J. Y. Jo et al.   PHYSICAL REVIEW LETTERS

Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

(2009) Qiu-Hong Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Operational method of a ferroelectric (Fe)-NAND flash memory array

(2009) Shouyu Wang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Basic operation of novel ferroelectric CMOS circuits

(2008) M. Takahashi et al.   ELECTRONICS LETTERS

Threshold-voltage distribution of Pt/SrBi2Ta2O9/Hf–Al–O/Si MFIS FETs

(2008) Qiu-Hong Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY