Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall

Channel Formation as an Interface Charging Process in a Pentacene Field Effect Transistor Investigated by Time-Resolved Second Harmonic Generation and Impedance Spectroscopy

(2013) Le Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

(2012) Kang Yan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

FeFET Logic Circuits for Operating A 64 kb FeNAND Flash Memory Array

(2012) Xizhen Zhang et al.   INTEGRATED FERROELECTRICS

A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

(2010) Kousuke Miyaji et al.   SOLID-STATE ELECTRONICS

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

(2010) Shigeki Sakai et al.   Materials

FeCMOS logic inverter circuits with nonvolatile-memory function

(2009) Mitsue Takahashi et al.   IEICE Electronics Express

Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

(2008) Hiroshi Ishiwara   CURRENT APPLIED PHYSICS

Basic operation of novel ferroelectric CMOS circuits

(2008) M. Takahashi et al.   ELECTRONICS LETTERS