64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

Published 2013 View Full Article

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Title
64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 4S, Pages 04DD01
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.04dd01

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