3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention

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Title
3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109endurance and good retention
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 4S, Pages 04CE04
Publisher
Japan Society of Applied Physics
Online
2017-02-27
DOI
10.7567/jjap.56.04ce04

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