100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance

Published 2015 View Full Article

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Title
100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 54, Issue 8, Pages 088004
Publisher
Japan Society of Applied Physics
Online
2015-07-24
DOI
10.7567/jjap.54.088004

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