AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Interview

(2010) J. Kostamovaara   ELECTRONICS LETTERS

Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)

(2010) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

(2010) Amélie Dussaigne et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

(2010) Kazuyuki Hirama et al.   JOURNAL OF APPLIED PHYSICS

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

(2009) Yoshitaka Taniyasu et al.   JOURNAL OF CRYSTAL GROWTH

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH