Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

Published 2020 View Full Article

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Title
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
Authors
Keywords
Memristor, Semiconducting materials, Potentiation, Depression
Journal
Results in Physics
Volume -, Issue -, Pages 103325
Publisher
Elsevier BV
Online
2020-08-13
DOI
10.1016/j.rinp.2020.103325

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