Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

Dual-step grown ternary aluminium zirconium oxide and its characteristics for metal-oxide-semiconductor capacitor

(2020) Way Foong Lim et al.   CERAMICS INTERNATIONAL

Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors

(2019) Xingjuan Song et al.   NANOTECHNOLOGY

A two-step growth route of ternary aluminium doped zirconium oxide film on silicon

(2018) Hock Jin Quah et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

(2017) Jun Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A significant enhancement in the photoluminescence emission of the Mg doped ZrO2 thin films by tailoring the effect of oxygen vacancy

(2017) S. Salari et al.   JOURNAL OF LUMINESCENCE

Atomic layer deposition deposited high dielectric constant (κ) ZrAlO x gate insulator enabling high performance ZnSnO thin film transistors

(2017) Chuan-Xin Huang et al.   SUPERLATTICES AND MICROSTRUCTURES

Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

(2017) Jun Li et al.   RSC Advances

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

(2016) Dongqi Xiao et al.   CERAMICS INTERNATIONAL

Improved Charge-Trapping Characteristics of ZrO2by Al Doping for Nonvolatile Memory Applications

(2016) X. D. Huang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Effect of temperature on the crystallinity, size and fluorescent properties of zirconia-based nanoparticles

(2015) F.J. Pereira et al.   MATERIALS CHEMISTRY AND PHYSICS

Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys

(2015) Hock Jin Quah et al.   Arabian Journal of Chemistry

Retardation Mechanism of Ultrathin Al2O3 Interlayer on Y2O3 Passivated Gallium Nitride Surface

(2014) Hock Jin Quah et al.   ACS Applied Materials & Interfaces

Synthesis and characterization of novel ZrO2-SiO2 mixed oxides

(2014) Milena Araújo Ferreira e Santos et al.   Materials Research-Ibero-american Journal of Materials

Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride

(2013) Hock Jin Quah et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

(2012) S. Spiga et al.   JOURNAL OF APPLIED PHYSICS

Influence of post-deposition annealing in oxygen ambient on metal–organic decomposed CeO2 film spin coated on 4H-SiC

(2011) Way Foong Lim et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Band-gap energy estimation from diffuse reflectance measurements on sol–gel and commercial TiO2: a comparative study

(2011) Rosendo López et al.   JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY

Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure

(2011) Hong Xiao et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Optical bandgap widening of p-type Cu2O films by nitrogen doping

(2009) Yoshitaka Nakano et al.   APPLIED PHYSICS LETTERS

Electrochromic TiO2, ZrO2 and TiO2–ZrO2 thin films by dip-coating method

(2009) T. Ivanova et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods

(2008) A. Tataroğlu et al.   MICROELECTRONIC ENGINEERING

Nanocomposite Al2O3–ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

(2007) D.H. Trinh et al.   THIN SOLID FILMS