Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition

(2011) Alessandro Molle et al.   Applied Physics Express

Cubic/Tetragonal Phase Stabilization in High-κ ZrO2 Thin Films Grown Using O3-Based Atomic Layer Deposition

(2011) A. Lamperti et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As

(2011) L. Lamagna et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Ultrathin EOT high-κ/metal gate devices for future technologies: Challenges, achievements and perspectives (invited)

(2011) L.-Å. Ragnarsson et al.   MICROELECTRONIC ENGINEERING

Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer

(2011) G. Congedo et al.   MICROELECTRONIC ENGINEERING

Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of yttrium-doped ZrO2: A first-principles approach

(2011) Davide Sangalli et al.   PHYSICAL REVIEW B

Band offsets and Fermi level pinning at metal-Al2O3interfaces

(2011) Lior Kornblum et al.   PHYSICAL REVIEW B

Thermal stability comparison of TaN on HfO2 and Al2O3

(2010) Jinhee Kwon et al.   APPLIED PHYSICS LETTERS

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

(2010) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS

Trapping in high-k dielectrics

(2010) Rosario Rao et al.   APPLIED PHYSICS LETTERS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

(2010) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

(2010) Qingyun Zuo et al.   IEEE ELECTRON DEVICE LETTERS

Nonvolatile Memory With Nitrogen-Stabilized Cubic-Phase $\hbox{ZrO}_{2}$ as Charge-Trapping Layer

(2010) Yung-Hsien Wu et al.   IEEE ELECTRON DEVICE LETTERS

High-Mobility TaN/$\hbox{Al}_{2}\hbox{O}_{3}$/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer

(2010) M. Jamil et al.   IEEE ELECTRON DEVICE LETTERS

Electron-Related Phenomena at the $\hbox{TaN/Al}_{2} \hbox{O}_{3}$ Interface

(2010) Rosario Rao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

(2010) Changhwan Choi et al.   JOURNAL OF APPLIED PHYSICS

Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

(2010) Dayu Zhou et al.   JOURNAL OF APPLIED PHYSICS

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

(2010) Sheng-Yu Wang et al.   NANOTECHNOLOGY

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

Influence of the amorphous/crystalline phase of Zr1−xAlxO2 high-k layers on the capacitance performance of metal insulator metal stacks

(2009) Albena Paskaleva et al.   JOURNAL OF APPLIED PHYSICS

Lattice dielectric and thermodynamic properties of yttria stabilized zirconia solids

(2009) Kah Chun Lau et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

(2008) P. Tsipas et al.   APPLIED PHYSICS LETTERS

Endurance Reliability of Multilevel-Cell Flash Memory Using a $ \hbox{ZrO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Dual Charge Storage Layer

(2008) Gang Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application

(2008) Qi Liu et al.   JOURNAL OF APPLIED PHYSICS