Improved Charge-Trapping Characteristics of ZrO2by Al Doping for Nonvolatile Memory Applications

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Title
Improved Charge-Trapping Characteristics of ZrO2by Al Doping for Nonvolatile Memory Applications
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 16, Issue 1, Pages 38-42
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-12-12
DOI
10.1109/tdmr.2015.2508153

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