Atomic layer deposition deposited high dielectric constant (κ) ZrAlO x gate insulator enabling high performance ZnSnO thin film transistors

Published 2017 View Full Article

Authors

Keywords

Atomic layer deposition, ZrAlO, x, gate insulator, ZTO TFTs, PBS stability

Journal

SUPERLATTICES AND MICROSTRUCTURES

Volume 109, Issue -, Pages 852-859

Publisher

Elsevier BV

Online

2017-06-07

DOI

10.1016/j.spmi.2017.06.011

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