Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors

Title
Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2019-11-26
DOI
10.1088/1361-6528/ab5b2d

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