Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors
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Title
Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 1, Issue 27, Pages 4236
Publisher
Royal Society of Chemistry (RSC)
Online
2013-05-09
DOI
10.1039/c3tc30530a
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