Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors

标题
Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors
作者
关键词
-
出版物
Journal of Materials Chemistry C
Volume 1, Issue 27, Pages 4236
出版商
Royal Society of Chemistry (RSC)
发表日期
2013-05-09
DOI
10.1039/c3tc30530a

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