Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

(2009) Gun Hee Kim et al.   APPLIED PHYSICS LETTERS

Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process

(2009) A J Flewitt et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Novel ZrInZnO Thin-film Transistor with Excellent Stability

(2008) Jin-Seong Park et al.   ADVANCED MATERIALS

Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

(2008) Doo-Hee Cho et al.   APPLIED PHYSICS LETTERS

Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors

(2008) Koshi Okamura et al.   APPLIED PHYSICS LETTERS

High mobility indium free amorphous oxide thin film transistors

(2008) Elvira M. C. Fortunato et al.   APPLIED PHYSICS LETTERS

Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

(2008) Gun Hee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY