Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

(2010) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

(2010) Sangwon Lee et al.   IEEE ELECTRON DEVICE LETTERS

High-resolution soft x-ray spectroscopic study on amorphous gallium indium zinc oxide thin films

(2010) Mi Ji Lee et al.   JOURNAL OF APPLIED PHYSICS

Thin-Film Transistors

(2009) Robert A. Street   ADVANCED MATERIALS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

(2009) Charlene Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Control of threshold voltage in ZnO-based oxide thin film transistors

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates

(2008) Wantae Lim et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

(2008) Kichan Jeon et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

(2008) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS