Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors

Interaction of zinc interstitial with oxygen vacancy in zinc oxide: An origin of n-type doping

(2012) Dae-Hee Kim et al.   SOLID STATE COMMUNICATIONS

Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

(2011) Sheng-Yao Huang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Analysis of Hump Characteristics in Thin-Film Transistors With ZnO Channels Deposited by Sputtering at Various Oxygen Partial Pressures

(2010) Mamoru Furuta et al.   IEEE ELECTRON DEVICE LETTERS

The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

(2009) Jaeseob Lee et al.   APPLIED PHYSICS LETTERS

Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

(2009) Yeon-Keon Moon et al.   APPLIED PHYSICS LETTERS

Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

(2009) Ken Hoshino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

(2008) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Effect of annealing on conductivity behavior of undoped zinc oxide prepared by rf magnetron sputtering

(2007) G.Z. Xing et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Studies on the degradation properties of the ZnO-based ceramic film varistors

(2007) S.L. Jiang et al.   MICROELECTRONIC ENGINEERING

New PMOS LTPS–TFT pixel for AMOLED to suppress the hysteresis effect on OLED current by employing a reset voltage driving

(2007) Jae-Hoon Lee et al.   SOLID-STATE ELECTRONICS