Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment
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Title
Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment
Authors
Keywords
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Journal
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 22, Pages 10994
Publisher
Royal Society of Chemistry (RSC)
Online
2012-04-19
DOI
10.1039/c2jm30242j
References
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Related references
Note: Only part of the references are listed.- Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness
- (2012) Yoon Jang Chung et al. JOURNAL OF APPLIED PHYSICS
- Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
- (2011) Bong Seob Yang et al. APPLIED PHYSICS LETTERS
- Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment
- (2011) Shinhyuk Yang et al. APPLIED PHYSICS LETTERS
- Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination
- (2011) Jeong Hwan Kim et al. APPLIED PHYSICS LETTERS
- Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
- (2011) Kwang Hwan Ji et al. APPLIED PHYSICS LETTERS
- Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors
- (2011) Keunkyu Song et al. JOURNAL OF MATERIALS CHEMISTRY
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- High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method
- (2011) Christophe Avis et al. JOURNAL OF MATERIALS CHEMISTRY
- Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer
- (2011) Jeong Hwan Kim et al. Physica Status Solidi-Rapid Research Letters
- O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
- (2010) Byungki Ryu et al. APPLIED PHYSICS LETTERS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
- (2010) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics
- (2010) Kwang Hwan Ji et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors
- (2010) Myung-Gil Kim et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors
- (2009) Min Ki Ryu et al. APPLIED PHYSICS LETTERS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors
- (2009) Jae Kyeong Jeong et al. Journal of the Society for Information Display
- Bulk-Limited Current Conduction in Amorphous InGaZnO Thin Films
- (2008) Hyun-Joong Chung et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Oxygen influence on the interaction mechanisms of ozone on SnO2 sensors
- (2007) L. Berry et al. SENSORS AND ACTUATORS B-CHEMICAL
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