Study on the Existence of Abnormal Hysteresis in Hf-In-Zn-O Thin Film Transistors under Illumination

Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors

(2011) Bong Seob Yang et al.   APPLIED PHYSICS LETTERS

Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination

(2011) Yoon Jang Chung et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

(2010) Eugene Chong et al.   APPLIED PHYSICS LETTERS

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

(2010) Shinhyuk Yang et al.   IEEE ELECTRON DEVICE LETTERS

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

(2008) Sang-Hee K. Park et al.   ADVANCED MATERIALS

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

(2008) Hideo Hosono et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS