Cation disorder as the major electron scattering source in crystalline InGaZnO

High-Performance Thin Film Transistor with Amorphous In$_{2}$O$_{3}$–SnO$_{2}$–ZnO Channel Layer

(2012) Shigekazu Tomai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

(2012) Sanghun Jeon et al.   NATURE MATERIALS

Microscopic Origin of Universal Quasilinear Band Structures of Transparent Conducting Oxides

(2012) Youngho Kang et al.   PHYSICAL REVIEW LETTERS

Enhanced amorphous stability of carbon-doped Ge2Sb2Te5: Ab Initio investigation

(2011) Eunae Cho et al.   APPLIED PHYSICS LETTERS

Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors

(2010) Ken Hoshino et al.   IEEE ELECTRON DEVICE LETTERS

Local structure and conduction mechanism in amorphous In–Ga–Zn–O films

(2009) Deok-Yong Cho et al.   APPLIED PHYSICS LETTERS

Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

(2009) Toshio Kamiya et al.   Journal of Display Technology

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology

Theoretical investigation of atomic and electronic structures ofGa2O3(ZnO)6

(2009) Juarez L. F. Da Silva et al.   PHYSICAL REVIEW B

Structural and electronic properties of crystalline InGaO3(ZnO)m

(2008) W.-J. Lee et al.   APPLIED PHYSICS LETTERS

Disorder and instability processes in amorphous conducting oxides

(2008) John Robertson   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS