Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

Title
Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 20, Pages 202117
Publisher
AIP Publishing
Online
2008-05-23
DOI
10.1063/1.2927306

Ask authors/readers for more resources

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started