High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

(2014) Umesh Chand et al.   IEEE ELECTRON DEVICE LETTERS

A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

(2014) Luca Larcher et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

(2013) Victor Yi-Qian Zhuo et al.   IEEE ELECTRON DEVICE LETTERS

Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

(2013) Jiyong Woo et al.   IEEE ELECTRON DEVICE LETTERS

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

(2013) Tz-yi Liu et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

(2013) Takeki Ninomiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices

(2011) Y. S. Chen et al.   APPLIED PHYSICS LETTERS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

(2011) Ming-Chi Wu et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of resistive switching characteristics in ZrO2film by embedding a thin TiOxlayer

(2011) Yingtao Li et al.   NANOTECHNOLOGY

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

(2009) Lin Yang et al.   APPLIED PHYSICS LETTERS