Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

Authors

Keywords

Journal

Volume 34, Issue 9, Pages 1130-1132

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2013-07-12

DOI

10.1109/led.2013.2271545

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