Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

Published 2014 View Full Article

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Title
Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 10, Pages 1019-1021
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-08-16
DOI
10.1109/led.2014.2345782

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