Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM

Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM

(2012) Marek Turowski et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs

(2011) Yi-Pin Fang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach

(2011) Ming-Long Fan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology

(2011) Matthew J. Gadlage et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

(2010) T. Chiarella et al.   SOLID-STATE ELECTRONICS

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

(2009) Matthew J. Gadlage et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

(2009) David F. Heidel et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE