Effect of high temperature annealing on the performance of MANOS charge trapping memory

Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

(2010) Amit Suhane et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of TANOS Memory Cells With Sealing Oxide Containing Blocking Dielectric

(2010) M. Florian Beug et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

(2010) M.S. Rahman et al.   SOLID-STATE ELECTRONICS

Barrier engineering in metal–aluminum oxide–nitride–oxide–silicon (MANOS) flash memory: Invited

(2009) Chang Yong Kang   CURRENT APPLIED PHYSICS

Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

(2009) A. Padovani et al.   IEEE ELECTRON DEVICE LETTERS

Electronic structure of memory traps in silicon nitride

(2009) V.A. Gritsenko et al.   MICROELECTRONIC ENGINEERING

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

(2009) M. Bocquet et al.   SOLID-STATE ELECTRONICS

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

(2008) Gan Wang et al.   SOLID-STATE ELECTRONICS