Article
Chemistry, Multidisciplinary
Camille Barbier, Ludovic Largeau, Noelle Gogneau, Laurent Travers, Christophe David, Ali Madouri, Dyhia Tamsaout, Jean-Christophe Girard, Guillemin Rodary, Hervei Montigaud, Christophe Durand, Maria Tchernycheva, Frank Glas, Jean-Christophe Harmand
Summary: This study investigates the nucleation of GaN nanostructures on graphene as growth substrates for semiconductors. By using plasma-assisted molecular beam epitaxy, the incubation time before the epitaxy of the first GaN islands is explored. It is found that graphene is modified after nitrogen plasma exposure, and C-N bonds are identified. The adhesion between graphene and GaN nanostructures is found to be strong due to the incorporation of pyridinic N atoms in the lattice. This work demonstrates the modification of a graphene monolayer before nucleation and growth of GaN nanowires becomes possible.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Nanoscience & Nanotechnology
Weifang Lu, Nanami Nakayama, Kazuma Ito, Sae Katsuro, Naoki Sone, Yoshiya Miyamoto, Koji Okuno, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Summary: The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell nanowires (NWs) were investigated, with the TMG supply and growth temperature found to be crucial parameters. High-angle annular dark-field scanning transmission electron microscopy characterization revealed no clear extended defects in the core and sidewall of the NWs, but some dislocations were observed at the interface between the serpentine MQS and the p-GaN shell near the tips.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Wei-Sheng Liu, Yu-Lin Chang, Tzu-Chun Chen, Shih-Chen Yu, Hsing-Chun Kuo
Summary: DC-pulse magnetron sputtering was used to deposit an n-type GaN thin film doped with Si-Sn onto a glass substrate with a ZnO buffer layer. Post-growth thermal annealing at various temperatures improved the film's crystal quality. Hall measurements showed that the film annealed at 500°C had the lowest resistance and highest carrier concentration, and atomic force microscopy revealed its specific surface properties. X-ray diffraction and x-ray photoelectron spectroscopy confirmed the crystal structure and composition of the film, while optical transmittance and contact resistance measurements indicated its suitability for optoelectronic devices.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Physical
F. Sonmez, E. Arslan, S. Ardali, E. Tiras, E. Ozbay
Summary: The electron mobility limited by different scattering mechanisms in the quaternary AlInGaN alloy grown on a GaN layer is investigated. The dominant scattering mechanisms are the interface roughness scattering and alloy disorder scattering at almost all temperatures. The thickness and alloy composition of the quaternary AlInGaN layer should be optimized for better transport properties.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Applied
Florian Pantle, Monika Karlinger, Simon Woerle, Fabian Becker, Theresa Hoeldrich, Elise Sirotti, Max Kraut, Martin Stutzmann
Summary: GaN nanostructures with 3D structure and non-polar crystal surfaces have great potential for a wide range of applications. Controlling the formation of side crystal facets is crucial for the stability and performance of GaN-based devices. By tuning the III-V ratio and nitrogen flux, the crystal facet formation on nanowire sidewalls can be controlled, and GaN nanofins with different side crystal facets can be grown. The study also reveals the growth mechanisms of the nanostructures and the correlation between growth kinetics and the formation of structural defects.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
R. Ramesh, P. Arivazhagan, K. Prabakaran, S. Sanjay, K. Baskar
Summary: AlGaN/GaN heterostructures with different thicknesses of AlN interlayer were grown using MOCVD. The surface roughness decreased with increasing interlayer thickness, and good interfaces were observed between the layers. The presence of AlN interlayer resulted in an increase in mobility from 1246 to 2000 cm(2)/volt-sec at 300K.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
O. Camara, A. H. Mir, G. Greaves, S. E. Donnelly, J. A. Hinks
Summary: Germanium nanowires rendered fully amorphous via xenon ion irradiation were annealed to induce crystallization within a transmission electron microscope. The presence of crystallites was observed to depend on the nanowire diameter, with thinner nanowires requiring higher annealing temperatures for crystallization. Oxygen atoms were proposed to hinder both the formation and growth of crystallites in the amorphous nanowires.
Article
Chemistry, Physical
E. Zielony, R. Szymon, A. Wierzbicka, A. Reszka, M. Sobanska, W. Pervez, Z. R. Zytkiewicz
Summary: In this study, Raman scattering and X-ray diffraction techniques were used to investigate strain and lattice vibration mechanisms in self-assembled GaN-AlxGa1-xN nanowire structures. The analysis of Raman spectra and XRD data provided insights into the chemical composition, strain, and lattice vibration mechanisms in these nanowires.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz
Summary: This study focused on the growth of GaN nanowires on Si(111) substrates using plasma-assisted molecular beam epitaxy, specifically investigating the orientation and growth rate of the nanowires. The researchers found that vertically aligned nanowires grew faster and produced more regular ensembles compared to inclined nanowires. These densely packed ensembles of vertically aligned GaN nanowires on ZrN/Si(111) surfaces are highly relevant for device applications.
Article
Physics, Applied
Mei Wu, Ke Cheng, Ling Yang, Bin Hou, Xin-Chuang Zhang, Ping Wang, Meng Zhang, Qing Zhu, Xue-Feng Zheng, Yan-Sheng Hu, Xiao-Hua Ma, Yue Hao
Summary: This study deposited a 1.5-μm polycrystalline diamond on the AlGaN/GaN heterojunction on a SiC substrate, and observed a 4.9% increase in strained GaN layer after diamond growth. The analysis of the interface revealed a reduction in SiN layer thickness, converting to a thin SiC layer, and no carbon diffusion was found in the SiN layer after diamond growth. Device simulation demonstrated that improving thermal boundary resistance was more effective for top-side heat spreading than enhancing diamond thermal conductivity.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Manufacturing
Chen Li, Yinchuan Piao, Binbin Meng, Yuxiu Hu, Longqiu Li, Feihu Zhang
Summary: The study explores the deformation and removal mechanisms of gallium nitride (GaN) single crystals during ultra-precision machining. The experimental results show that abrasive size significantly affects the surface morphology and roughness, leading to a transition from brittle fracture-dominated surface to a plastic surface with reduced abrasive size. Through cross-sectional TEM method and MD simulation, it is found that plastic deformation in GaN crystals is caused by the formation of polycrystalline nanocrystals and defects, with an observable delamination phenomenon in the plastic deformation zone.
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE
(2022)
Article
Chemistry, Multidisciplinary
Han Chen, Zefeng Lin, Hongwei Qiu, Yan Tang, Shini Yang, Jingtian Zhao, Qicheng Zhou, Jun Wang, Guozhen Liu, Yang Zhao, Dongsheng Chen, Zhibin Luo, Feiya Xu, Shengli Huang, Xiaohong Chen, Shuping Li, Duanjun Cai, Junyong Kang
Summary: In this study, a self-powered photoelectrochemical photodetector based on Cu@GaN nanowires network was demonstrated, which can directly utilize seawater for underwater optical communication. The photodetector showed stable performance in both shallow and deep-sea conditions, with high responsivity and rapid response time, making it a convenient solution for future energy-saving underwater optical communication.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Omar Saket, Junkang Wang, Nuno Amador-Mendez, Martina Morassi, Arup Kunti, Fabien Bayle, Stephane Collin, Arnaud Jollivet, Andrey Babichev, Tanbir Sodhi, Jean-Christophe Harmand, Francois H. Julien, Noelle Gogneau, Maria Tchernycheva
Summary: In this study, the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources were analyzed. The results showed that parasitic radial growth enhanced by magnesium doping led to fluctuations in the junction position and shape, while reverting the doping order resulted in a more stable structure and better optical quality. Additionally, a high hole concentration in the p-doped segment was achieved without degrading the nanowire morphology.
Article
Chemistry, Analytical
Jialing Zhou, Hui Huang, Shunji Chen, Mengyuan Wang, Danna Zhao, Jun Yu, Senlin Jin, Yuan Zhong, Xiaoming Chen, Xiaocai Yu, Pengbo Liu, Jian Zhao
Summary: GaN material has been successfully used for biosensor application by self-assembly growing GaN porous-layers on GaN-coated sapphire substrates. The optimized structure shows high sensitivity and low detection limit, making it promising for future detection applications.
SENSORS AND ACTUATORS B-CHEMICAL
(2021)
Article
Physics, Applied
Xingchen Liu, Hongming Guan, Ning Tang, Yuanjie Lv, Ling Chen, Xiaoyue Zhang, Shixiong Zhang, Yunfan Zhang, Xinqiang Wang, Weikun Ge, Bo Shen
Summary: The study investigated the angle and external gate-voltage dependences of the interfacial spin-orbit coupling in GaN nanowires using circular photo-galvanic effect (CPGE). The interfacial SOC-induced CPGE shows a twofold degeneracy, while the removal of the sixfold degeneracy is attributed to the asymmetrical optical absorption. The interfacial SOC-induced CPGE shows a weak dependence on the external gate voltage, which is totally different from the WSIA-related SOC.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Valentina Cantelli, Sophie Guillemin, Eirini Sarigiannidou, Francesco Carla, Bruno Berini, Jean-Michel Chauveau, Dillon D. Fong, Hubert Renevier, Vincent Consonni
Summary: The polarity of ZnO nanowires affects their nucleation process and morphology development. The study shows that the formation of ZnO nanowires follows three phases and the characteristics of each phase depend on the polarity of the nanowires. This research provides a deeper understanding of the physicochemical processes at work during the growth of ZnO nanowires.
Article
Chemistry, Multidisciplinary
Guislain Hector, Jako S. Eensalu, Atanas Katerski, Herve Roussel, Odette Chaix-Pluchery, Estelle Appert, Fabrice Donatini, Ilona Oja Acik, Erki Kaerber, Vincent Consonni
Summary: The dimensional optimization of ZnO/TiO2/Sb2S3 core-shell nanowire heterostructures was studied and it was found that an optimal intermediate thickness of the Sb2S3 shell results in the highest solar cell efficiency.
Article
Materials Science, Multidisciplinary
Frederic Bonell, Alain Marty, Celine Vergnaud, Vincent Consonni, Hanako Okuno, Abdelkarim Ouerghi, Herye Boukari, Matthieu Jamet
Summary: This study reports the growth of highly oriented few-layers PtSe2 on ZnO(0001) and finds that PtSe2 films grown on insulating substrate ZnO(0001) have better structural quality. Hall measurements performed on the epitaxial ZnO/PtSe2 demonstrate good semiconductor behavior and high mobility.
Article
Chemistry, Multidisciplinary
Jose Villafuerte, Eirini Sarigiannidou, Fabrice Donatini, Joseph Kioseoglou, Odette Chaix-Pluchery, Julien Pernot, Vincent Consonni
Summary: This study investigates the influence of pH on the morphology and optical properties of ZnO nanowires (NWs) grown by chemical bath deposition (CBD). It is found that increasing the pH leads to a higher density of V-Zn-nH defect complexes in ZnO NWs. Annealing at 450 degrees C under an oxygen atmosphere helps to tune the optical properties of ZnO NWs by reducing the density of H-BC and V-Zn-related defects, while activating the formation of V-Zn-N-O-H defect complexes.
NANOSCALE ADVANCES
(2022)
Article
Chemistry, Physical
Pierre Gaffuri, Tatjana Dedova, Estelle Appert, Mati Danilson, Adrien Baillard, Odette Chaix-Pluchery, Frank Guell, Ilona Oja-Acik, Vincent Consonni
Summary: Water pollution is a major ecological threat, and ZnO nanowires are being developed for heterogeneous photocatalysis as a solution. The addition of Al and Ga dopants, as well as thermal annealing, have been found to enhance the photocatalytic activity of ZnO nanowires, with the activity depending on the nature of the dopants.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Inorganic & Nuclear
Adrien Baillard, Estelle Appert, Matthieu Weber, Veronique Jacob, Herve Roussel, Laetitia Rapenne, Odette Chaix-Pluchery, Vincent Consonni
Summary: This study finds that the simultaneous co-doping of ZnO nanowires with Al and Ga in a chemical bath deposition requires specific conditions in a high-pH range, where attractive electrostatic forces drive the adsorption processes of respective Al(OH)4- and Ga(OH)4- complexes. The co-doping process is mainly influenced by Al species, and there is significant interplay between the incorporation processes of Al and Ga dopants. The incorporation of Al and Ga dopants on the surfaces of ZnO nanowires is enhanced by thermal annealing while their bulk incorporation is also observed. The Al and Ga dopants have a direct impact on the formation of hydrogen-related defects, particularly in suppressing the formation of VZn-nH defect complexes.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Multidisciplinary
Clement Lausecker, Bassem Salem, Xavier Baillin, Vincent Consonni
Summary: The formation mechanisms of ZnO nanowires from Au seed layers are investigated for different precursor concentrations, leading to variations in the morphological properties. The thermodynamic properties of the chemical bath play a critical role in the formation of ZnO nanowires. This study provides valuable insights for optimizing the morphology of ZnO nanowires for their integration into piezoelectric devices.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Chemistry, Inorganic & Nuclear
Guislain Hector, Estelle Appert, Herve Roussel, Isabelle Gelard, Vincent Consonni
Summary: The growth of GaOOH by chemical bath deposition has attracted great attention due to its potential applications in gas sensing, solar-blind UV-C photodetection, and power electronics. The structural morphology of GaOOH deposits can be tuned by adjusting the initial pH value, resulting in different dimensions, density, and nature of the deposits. These findings provide insights into the correlation between the characteristics of the chemical bath and the resulting structural morphology, offering possibilities for engineering GaOOH and Ga2O3-based materials with desired properties.
INORGANIC CHEMISTRY
(2023)
Article
Chemistry, Physical
Adrien Baillard, Estelle Appert, Matthieu Weber, Veronique Jacob, Herve Roussel, Laetitia Rapenne, Odette Chaix-Pluchery, Vincent Consonni
Summary: The simultaneous cationic and anionic co-doping of ZnO nanowires with Al and Cl using one single chemical additive offers a promising way to optimize their physical properties and facilitate their integration into engineering devices. In this study, we investigate the effect of single doping with Al and Cl and extend the approach to their simultaneous co-doping. The co-doping process reveals significant interplay effects between Al(III) and Cl(I) species through competitive adsorption and incorporation processes.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Quang Chieu Bui, Vincent Consonni, Sarah Boubenia, Guillaume Gay, Corinne Perret, Mohammed Zeghouane, Sebastien Labau, Carmen Jimenez, Herve Roussel, Xavier Mescot, Gustavo Ardila, Bassem Salem
Summary: This study investigates the use of aluminum-doped zinc oxide (AZO) as an ecofriendly bottom electrode for ZnO nanowire-based mechanical energy transducers. The researchers find that the piezoelectric performance of ZnO nanowires grown on AZO thin films is higher compared to those grown on heavily doped Si substrates. They also discover that the optical transmittance of the AZO thin film/ZnO NW structure is 81.2% in the wavelength range of 400-700 nm. This research opens up possibilities for fabricating transparent piezoelectric devices using ecofriendly materials and scalable chemical deposition techniques.
ACS APPLIED NANO MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Chiara Crivello, Thomas Jalabert, Matthieu Weber, Herve Roussel, Laetitia Rapenne, Hugo Mander, Fabrice Donatini, Vincent Consonni, Gustavo Ardila, David Munoz-Rojas
Summary: Many functional devices rely on thin films deposited through physical or chemical vapour deposition methods. This study introduces the use of a volatile shape-directing agent (VSDA) to control the texture and growth rate of ZnO thin films. By adding 4-(5)-Methylimidazole (4-(5)-MeIM) during the deposition process, ZnO thin films can be grown preferentially along [001] direction, resulting in enhanced piezoelectric coefficient. The amount of VSDA used also impacts the polarity of the ZnO films. This innovative approach has potential applications in controlling texture and polarity for other functional materials.
Article
Chemistry, Physical
Jose Villafuerte, Xiaoting Zhang, Eirini Sarigiannidou, Fabrice Donatini, Odette Chaix-Pluchery, Laetitia Rapenne, Minh-Quyen Le, Lionel Petit, Julien Pernot, Vincent Consonni
Summary: Piezoelectric devices made of ZnO nanowires have attracted great interest as potential nanogenerators and sensors in the past decade. However, their characteristics are limited by the screening effect of the piezoelectric potential generated under mechanical solicitations. To address this issue, we developed the compensatory Sb doping of ZnO nanowires and achieved significant incorporation of Sb dopants.
Article
Materials Science, Multidisciplinary
Eirini Sarigiannidou, Pierre Gaffuri, Fabrice Wilhelm, Joseph Kioseoglou, Andrei Rogalev, Efstratios Nikidis, Estelle Appert, Vincent Consonni
Summary: By employing synchrotron radiation-based x-ray linear dichroism and density functional theory calculations, we investigated the local structural environment around Ga dopants in ZnO nanowires grown by chemical bath deposition. We found that the VZn-GaZn-nH defect complexes are predominantly formed, confirming hydrogen as an efficient passivating species even for intentional dopants like Ga. The residual and intentional doping processes are highly correlated through significant interplay effects. These findings provide a new understanding of intentional dopant-induced defects and defect complexes in ZnO nanowires and highlight the role of hydrogen in controlling their optical and electrical properties.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Quang Chieu Bui, Vincent Consonni, Sarah Boubenia, Guillaume Gay, Corinne Perret, Mohammed Zeghouane, Sebastien Labau, Herve Roussel, Xavier Mescot, Gustavo Ardila, Bassem Salem
Summary: The researchers have successfully optimized the growth and properties of aluminum-doped ZnO (AZO) thin films using atomic layer deposition (ALD), resulting in thin films with excellent electrical and optical properties. This is of great significance for the development of high-performance semiconductor devices.
Article
Materials Science, Multidisciplinary
Quang Chieu Bui, Gustavo Ardila, Herve Roussel, Carmen Jimenez, Isabelle Gelard, Odette Chaix-Pluchery, Xavier Mescot, Sarah Boubenia, Bassem Salem, Vincent Consonni
Summary: The research investigates the impact of O-2 gas and DEZn solution flow rates on properties of ZnO thin films, finding that the piezoelectric amplitude of ZnO thin films is significantly affected by the O-2/DEZn flow rate ratio, with Zn-polarity domains exhibiting a larger amplitude than O-polarity domains. Additionally, a comprehensive description of the formation process through different regimes is gained.
MATERIALS ADVANCES
(2022)