In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 21, Pages 212107
Publisher
AIP Publishing
Online
2012-05-23
DOI
10.1063/1.4721521
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Ultra-thin high-quality silicon nitride films on Si(111)
- (2011) J. Falta et al. EPL
- Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
- (2011) Rafael Mata et al. JOURNAL OF CRYSTAL GROWTH
- Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
- (2011) Karine Hestroffer et al. PHYSICAL REVIEW B
- Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy
- (2010) Kris A. Bertness et al. ADVANCED FUNCTIONAL MATERIALS
- Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
- (2010) G. Radtke et al. APPLIED PHYSICS LETTERS
- In situ investigation of self-induced GaN nanowire nucleation on Si
- (2010) C. Chèze et al. APPLIED PHYSICS LETTERS
- Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
- (2010) X. J. Chen et al. APPLIED PHYSICS LETTERS
- Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
- (2010) V. Consonni et al. PHYSICAL REVIEW B
- A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
- (2009) S. Fernández-Garrido et al. JOURNAL OF APPLIED PHYSICS
- Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
- (2009) O Landré et al. NANOTECHNOLOGY
- Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
- (2008) Florian Furtmayr et al. JOURNAL OF APPLIED PHYSICS
- Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
- (2008) K.A. Bertness et al. JOURNAL OF CRYSTAL GROWTH
- On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
- (2008) Jelena Ristić et al. JOURNAL OF CRYSTAL GROWTH
- Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
- (2008) L Largeau et al. NANOTECHNOLOGY
- Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires
- (2008) Toma Stoica et al. Small
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started