In situ investigation of self-induced GaN nanowire nucleation on Si

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

(2010) V. Consonni et al.   PHYSICAL REVIEW B

Effects of nanowire coalescence on their structural and optical properties on a local scale

(2009) V. Consonni et al.   APPLIED PHYSICS LETTERS

Coaxial Group III−Nitride Nanowire Photovoltaics

(2009) Yajie Dong et al.   NANO LETTERS

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

(2009) O Landré et al.   NANOTECHNOLOGY

Nanowire photonics

(2009) Ruoxue Yan et al.   Nature Photonics

GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

(2008) S.D. Hersee et al.   ELECTRONICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

The role of collisions in the aligned growth of vertical nanowires

(2008) Qiming Li et al.   JOURNAL OF CRYSTAL GROWTH

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small